The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence

M. P. Suryawanshi, P. S. Patil, Seung Wook Shin, K. V. Gurav, G. L. Agawane, M. G. Gang, Jin Hyeok Kim, A. V. Moholkar

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Abstract

A novel approach of successive ionic adsorption and reaction (SILAR) with a modified sequence is developed to synthesize Cu2ZnSnS4 (CZTS) films with outstanding photovoltaic characteristics. The influence of different anionic bath immersion times on the properties of CZTS films is investigated. The best PEC of 2.33% with a maximum Jsc of 12.88 mA cm-2, Voc of 0.42 V and FF of 0.43 is obtained for the lower value of anionic bath immersion time.

Original languageEnglish (US)
Pages (from-to)18537-18540
Number of pages4
JournalRSC Advances
Volume4
Issue number36
DOIs
StatePublished - 2014

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    Suryawanshi, M. P., Patil, P. S., Shin, S. W., Gurav, K. V., Agawane, G. L., Gang, M. G., Kim, J. H., & Moholkar, A. V. (2014). The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence. RSC Advances, 4(36), 18537-18540. https://doi.org/10.1039/c4ra01208a