The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)

Charles N. Arutt, Michael L. Alles, Wenjun Liao, Huiqi Gong, Jim L. Davidson, Ronald D. Schrimpf, Robert A. Reed, Robert A. Weller, Kirill Bolotin, Ryan Nicholl, Thang Toan Pham, Alex Zettl, Du Qingyang, Juejun Hu, Mo Li, Bruce W. Alphenaar, Ji Tzuoh Lin, Pranoy Deb Shurva, Shamus McNamara, Kevin M. WalshPhilip X L Feng, Louis Hutin, Thomas Ernst, Brian D. Homeijer, Ronald G. Polcawich, Robert M. Proie, Jacob L. Jones, Evan R. Glaser, Cory D. Cress, Nazanin Bassiri-Gharb

Research output: Contribution to journalReview articlepeer-review

24 Scopus citations


The potential of micro and nano electromechanical systems (M and NEMS) has expanded due to advances in materials and fabrication processes. A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide (SiC), III-V materials, thin-film piezoelectric and ferroelectric, electro-optical and 2D atomic crystals such as graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The miniaturization, functionality and low-power operation offered by these types of devices are attractive for many application areas including physical sciences, medical, space and military uses, where exposure to radiation is a reliability consideration. Understanding the impact of radiation on these materials and devices is necessary for applications in radiation environments.

Original languageEnglish (US)
Article number013005
JournalSemiconductor Science and Technology
Issue number1
StatePublished - Jan 2017

Bibliographical note

Funding Information:
This work is supported by the Defense Threat Reduction Agency Basic Research Program, Grants number: HDTRA1- 15-1-0027, HDTRA1-15-1-0035, HDTRA1-15-1-0036, HDTRA1-15-1-0039, and HDTRA1-15-1-0060.

Publisher Copyright:
© 2016 IOP Publishing Ltd.


  • 2D materials
  • MEMS
  • NEMS
  • micromachined cantilevers
  • radiation effects
  • silicon carbide (SiC)


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