Abstract
The potential of micro and nano electromechanical systems (M and NEMS) has expanded due to advances in materials and fabrication processes. A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide (SiC), III-V materials, thin-film piezoelectric and ferroelectric, electro-optical and 2D atomic crystals such as graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The miniaturization, functionality and low-power operation offered by these types of devices are attractive for many application areas including physical sciences, medical, space and military uses, where exposure to radiation is a reliability consideration. Understanding the impact of radiation on these materials and devices is necessary for applications in radiation environments.
Original language | English (US) |
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Article number | 013005 |
Journal | Semiconductor Science and Technology |
Volume | 32 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2017 |
Bibliographical note
Funding Information:This work is supported by the Defense Threat Reduction Agency Basic Research Program, Grants number: HDTRA1- 15-1-0027, HDTRA1-15-1-0035, HDTRA1-15-1-0036, HDTRA1-15-1-0039, and HDTRA1-15-1-0060.
Publisher Copyright:
© 2016 IOP Publishing Ltd.
Keywords
- 2D materials
- MEMS
- NEMS
- micromachined cantilevers
- radiation effects
- silicon carbide (SiC)