The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

Bahadir Kucukgok; Xuewang Wu; Xiaojia Wang; Zhiqiang Liu; Ian T. Ferguson; Na Lu

doi:10.1063/1.4941934

The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

Bahadir Kucukgok, Xuewang Wu, Xiaojia Wang, Zhiqiang Liu, Ian T. Ferguson, Na Lu

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Abstract

The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown In_xGa_1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K^-1 and 21.84 × 10^-4 Wm^-1K^-1 were observed, respectively for In_0.07Ga_0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In_0.20Ga_0.80N alloy at room temperature.

Original language	English (US)
Article number	025305
Journal	AIP Advances
Volume	6
Issue number	2
DOIs	https://doi.org/10.1063/1.4941934
State	Published - Feb 2016

Bibliographical note

Funding Information:
This research is supported by National Science Foundation under Faculty Early Career Development Program (CMMI- 1351817). X. W and X. W. would like to thank the support from the National Science Foundation through the University of Minnesota MRSEC under Award Number DMR-1420013.

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abstract = "The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K-1 and 21.84 × 10-4 Wm-1K-1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.",

author = "Bahadir Kucukgok and Xuewang Wu and Xiaojia Wang and Zhiqiang Liu and Ferguson, {Ian T.} and Na Lu",

note = "Funding Information: This research is supported by National Science Foundation under Faculty Early Career Development Program (CMMI- 1351817). X. W and X. W. would like to thank the support from the National Science Foundation through the University of Minnesota MRSEC under Award Number DMR-1420013. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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AU - Kucukgok, Bahadir

AU - Wu, Xuewang

AU - Wang, Xiaojia

AU - Liu, Zhiqiang

AU - Ferguson, Ian T.

AU - Lu, Na

N1 - Funding Information: This research is supported by National Science Foundation under Faculty Early Career Development Program (CMMI- 1351817). X. W and X. W. would like to thank the support from the National Science Foundation through the University of Minnesota MRSEC under Award Number DMR-1420013. Publisher Copyright: © 2016 Author(s).

PY - 2016/2

Y1 - 2016/2

N2 - The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K-1 and 21.84 × 10-4 Wm-1K-1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.

AB - The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K-1 and 21.84 × 10-4 Wm-1K-1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.

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The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

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