TY - JOUR
T1 - The Staebler-Wronski effect and 1/f noise in amorphous silicon
AU - Belich, T. J.
AU - Kakalios, J.
PY - 2001
Y1 - 2001
N2 - Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.
AB - Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.
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U2 - 10.1557/proc-664-a14.5
DO - 10.1557/proc-664-a14.5
M3 - Conference article
AN - SCOPUS:0035556363
VL - 664
SP - A1451-A1456
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
T2 - Amorphous and Heterogeneous Silicon Based Films 2001
Y2 - 16 April 2001 through 20 April 2001
ER -