Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.
|Original language||English (US)|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 2001|
|Event||Amorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States|
Duration: Apr 16 2001 → Apr 20 2001
Bibliographical noteFunding Information:
This research is supported by NREL/AAD-9-18668-13 and the University of Minnesota.