The Staebler-Wronski effect and 1/f noise in amorphous silicon

T. J. Belich, J. Kakalios

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.

Original languageEnglish (US)
Pages (from-to)A1451-A1456
JournalMaterials Research Society Symposium - Proceedings
Volume664
DOIs
StatePublished - 2001
EventAmorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

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