Abstract
Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.
| Original language | English (US) |
|---|---|
| Pages (from-to) | A1451-A1456 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 664 |
| DOIs | |
| State | Published - 2001 |
| Event | Amorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001 |
Bibliographical note
Funding Information:This research is supported by NREL/AAD-9-18668-13 and the University of Minnesota.