The Staebler-Wronski effect and 1/f noise in amorphous silicon

T. J. Belich; J. Kakalios

doi:10.1557/proc-664-a14.5

The Staebler-Wronski effect and 1/f noise in amorphous silicon

T. J. Belich, J. Kakalios

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.

Original language	English (US)
Pages (from-to)	A1451-A1456
Journal	Materials Research Society Symposium - Proceedings
Volume	664
DOIs	https://doi.org/10.1557/proc-664-a14.5
State	Published - 2001
Event	Amorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001

Bibliographical note

Funding Information:
This research is supported by NREL/AAD-9-18668-13 and the University of Minnesota.

Publisher link

10.1557/proc-664-a14.5

Find It

Find It at U of M Libraries

Cite this

@article{4f9447a72191429f844373e504de5dbd,

title = "The Staebler-Wronski effect and 1/f noise in amorphous silicon",

abstract = "Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.",

author = "Belich, {T. J.} and J. Kakalios",

note = "Funding Information: This research is supported by NREL/AAD-9-18668-13 and the University of Minnesota.; Amorphous and Heterogeneous Silicon Based Films 2001 ; Conference date: 16-04-2001 Through 20-04-2001",

year = "2001",

doi = "10.1557/proc-664-a14.5",

language = "English (US)",

volume = "664",

pages = "A1451--A1456",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - The Staebler-Wronski effect and 1/f noise in amorphous silicon

AU - Belich, T. J.

AU - Kakalios, J.

N1 - Funding Information: This research is supported by NREL/AAD-9-18668-13 and the University of Minnesota.

PY - 2001

Y1 - 2001

N2 - Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.

AB - Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.

UR - http://www.scopus.com/inward/record.url?scp=0035556363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035556363&partnerID=8YFLogxK

U2 - 10.1557/proc-664-a14.5

DO - 10.1557/proc-664-a14.5

M3 - Conference article

AN - SCOPUS:0035556363

SN - 0272-9172

VL - 664

SP - A1451-A1456

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Amorphous and Heterogeneous Silicon Based Films 2001

Y2 - 16 April 2001 through 20 April 2001

ER -

The Staebler-Wronski effect and 1/f noise in amorphous silicon

Abstract

Bibliographical note

Publisher link

Find It

Other files and links

Fingerprint

Cite this