Keyphrases
Recombination
100%
A-Si
100%
Dangling Bonds
100%
Luminescence
25%
Defect Density
25%
Electron Spin Resonance
25%
Capture Cross Section
25%
Non-monotonic Behavior
25%
Chemical Disorder
25%
Ge Concentration
25%
Time-of-flight Photoconductivity
25%
Si Dangling Bonds
25%
Tunnel Model
25%
Deep Traps
25%
Luminescence Intensity
25%
Time of Flight Experiment
25%
Tunneling Distance
25%
Engineering
Dangling Bond
100%
Time-of-Flight
66%
Tunnel Construction
66%
Capture Cross Section
33%
Ge Concentration
33%
Defect Density
33%
Material Science
Luminescence
100%
Photoconductivity
50%
Electron Paramagnetic Resonance Spectroscopy
50%
Defect Density
50%