The role of carbon in the precipitation of oxygen in silicon

G. S. Oehrlein, D. J. Challou, A. E. Jaworowski, J. W. Corbett

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Oxygen precipitates were formed in Czochralski-grown silicon samples at different temperatures and for different lenghts of times of heat treatment. Precipitation was evident from infrared(IR) analysis of so treated samples. These samples were irradiated with 2 MeV electrons at near room temperature (310 K). Deep level transient spectroscopy measurements and IR measurements were performed on these samples. The results show directly that a single carbon atom or a carbon-oxygen complex can serve as nucleation centers for the oxygen precipitation.

Original languageEnglish (US)
Pages (from-to)117-119
Number of pages3
JournalPhysics Letters A
Issue number2
StatePublished - Nov 2 1981


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