The role of back stress in sub-50 nm Si nanocubes

E. D. Hintsala; A. J. Wagner; W. W. Gerberich; K. A. Mkhoyan

doi:10.1016/j.scriptamat.2015.12.004

The role of back stress in sub-50 nm Si nanocubes

E. D. Hintsala, A. J. Wagner, W. W. Gerberich, K. A. Mkhoyan

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Development of more accurate descriptions of dislocation motion requires understanding the actual effective stress driving it. Back stresses from dislocation pile-ups can work against the applied stress resulting in lower stresses acting on moving dislocations. This study presents calculations of back stress derived from in-situ compression of 26-39 nm sized single crystal silicon cubes inside the transmission electron microscope. These initially dislocation free particles exhibited yielding culminating in over 60% plastic strain. The back stress was calculated based on a pile-up model which, when subtracted from the applied stress, suggests a constant effective stress for continuing plasticity.

Original language	English (US)
Pages (from-to)	51-55
Number of pages	5
Journal	Scripta Materialia
Volume	114
DOIs	https://doi.org/10.1016/j.scriptamat.2015.12.004
State	Published - Mar 15 2016

Bibliographical note

Funding Information:
This work was supported in part by NSF MRSEC under awards DMR-0819885 and DMR-1420013 . STEM analysis was carried out in the Characterization Facility of the University of Minnesota, which receives partial support from the NSF through the MRSEC program. The authors would like to thank Doug Stauffer and Ryan Major of Hysitron for their continued support.

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.

Keywords

Back stress
Dislocations
Nanoparticles
Silicon
Work hardening

MRSEC Support

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10.1016/j.scriptamat.2015.12.004

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abstract = "Development of more accurate descriptions of dislocation motion requires understanding the actual effective stress driving it. Back stresses from dislocation pile-ups can work against the applied stress resulting in lower stresses acting on moving dislocations. This study presents calculations of back stress derived from in-situ compression of 26-39 nm sized single crystal silicon cubes inside the transmission electron microscope. These initially dislocation free particles exhibited yielding culminating in over 60% plastic strain. The back stress was calculated based on a pile-up model which, when subtracted from the applied stress, suggests a constant effective stress for continuing plasticity.",

keywords = "Back stress, Dislocations, Nanoparticles, Silicon, Work hardening",

author = "Hintsala, {E. D.} and Wagner, {A. J.} and Gerberich, {W. W.} and Mkhoyan, {K. A.}",

note = "Funding Information: This work was supported in part by NSF MRSEC under awards DMR-0819885 and DMR-1420013 . STEM analysis was carried out in the Characterization Facility of the University of Minnesota, which receives partial support from the NSF through the MRSEC program. The authors would like to thank Doug Stauffer and Ryan Major of Hysitron for their continued support. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.",

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AU - Hintsala, E. D.

AU - Wagner, A. J.

AU - Gerberich, W. W.

AU - Mkhoyan, K. A.

N1 - Funding Information: This work was supported in part by NSF MRSEC under awards DMR-0819885 and DMR-1420013 . STEM analysis was carried out in the Characterization Facility of the University of Minnesota, which receives partial support from the NSF through the MRSEC program. The authors would like to thank Doug Stauffer and Ryan Major of Hysitron for their continued support. Publisher Copyright: © 2015 Elsevier B.V. All rights reserved. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.

PY - 2016/3/15

Y1 - 2016/3/15

N2 - Development of more accurate descriptions of dislocation motion requires understanding the actual effective stress driving it. Back stresses from dislocation pile-ups can work against the applied stress resulting in lower stresses acting on moving dislocations. This study presents calculations of back stress derived from in-situ compression of 26-39 nm sized single crystal silicon cubes inside the transmission electron microscope. These initially dislocation free particles exhibited yielding culminating in over 60% plastic strain. The back stress was calculated based on a pile-up model which, when subtracted from the applied stress, suggests a constant effective stress for continuing plasticity.

AB - Development of more accurate descriptions of dislocation motion requires understanding the actual effective stress driving it. Back stresses from dislocation pile-ups can work against the applied stress resulting in lower stresses acting on moving dislocations. This study presents calculations of back stress derived from in-situ compression of 26-39 nm sized single crystal silicon cubes inside the transmission electron microscope. These initially dislocation free particles exhibited yielding culminating in over 60% plastic strain. The back stress was calculated based on a pile-up model which, when subtracted from the applied stress, suggests a constant effective stress for continuing plasticity.

KW - Back stress

KW - Dislocations

KW - Nanoparticles

KW - Silicon

KW - Work hardening

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EP - 55

JO - Scripta Materialia

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ER -

The role of back stress in sub-50 nm Si nanocubes

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

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University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-2: Sustainable Nanocrystal Materials

University of Minnesota MRSEC DMR-0819885

Cite this

The role of back stress in sub-50 nm Si nanocubes

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

Find It

Other files and links

Fingerprint

Projects

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-2: Sustainable Nanocrystal Materials

University of Minnesota MRSEC DMR-0819885

Cite this