The role of back stress in sub-50 nm Si nanocubes

E. D. Hintsala, A. J. Wagner, W. W. Gerberich, K. A. Mkhoyan

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Development of more accurate descriptions of dislocation motion requires understanding the actual effective stress driving it. Back stresses from dislocation pile-ups can work against the applied stress resulting in lower stresses acting on moving dislocations. This study presents calculations of back stress derived from in-situ compression of 26-39 nm sized single crystal silicon cubes inside the transmission electron microscope. These initially dislocation free particles exhibited yielding culminating in over 60% plastic strain. The back stress was calculated based on a pile-up model which, when subtracted from the applied stress, suggests a constant effective stress for continuing plasticity.

Original languageEnglish (US)
Pages (from-to)51-55
Number of pages5
JournalScripta Materialia
StatePublished - Mar 15 2016


  • Back stress
  • Dislocations
  • Nanoparticles
  • Silicon
  • Work hardening

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 2

Fingerprint Dive into the research topics of 'The role of back stress in sub-50 nm Si nanocubes'. Together they form a unique fingerprint.

Cite this