The role of back stress in sub-50 nm Si nanocubes

E. D. Hintsala, A. J. Wagner, W. W. Gerberich, K. A. Mkhoyan

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Development of more accurate descriptions of dislocation motion requires understanding the actual effective stress driving it. Back stresses from dislocation pile-ups can work against the applied stress resulting in lower stresses acting on moving dislocations. This study presents calculations of back stress derived from in-situ compression of 26-39 nm sized single crystal silicon cubes inside the transmission electron microscope. These initially dislocation free particles exhibited yielding culminating in over 60% plastic strain. The back stress was calculated based on a pile-up model which, when subtracted from the applied stress, suggests a constant effective stress for continuing plasticity.

Original languageEnglish (US)
Pages (from-to)51-55
Number of pages5
JournalScripta Materialia
StatePublished - Mar 15 2016

Bibliographical note

Funding Information:
This work was supported in part by NSF MRSEC under awards DMR-0819885 and DMR-1420013 . STEM analysis was carried out in the Characterization Facility of the University of Minnesota, which receives partial support from the NSF through the MRSEC program. The authors would like to thank Doug Stauffer and Ryan Major of Hysitron for their continued support.

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Copyright 2016 Elsevier B.V., All rights reserved.


  • Back stress
  • Dislocations
  • Nanoparticles
  • Silicon
  • Work hardening

MRSEC Support

  • Primary


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