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The revolution in SiGe: Impact on device electronics
D. L. Harame
, S. J. Koester
, G. Freeman
, P. Cottrel
, K. Rim
, G. Dehlinger
, D. Ahlgren
, J. S. Dunn
, D. Greenberg
, A. Joseph
, F. Anderson
, J. S. Rieh
, S. A.S.T. Onge
, D. Coolbaugh
, V. Ramachandran
, J. D. Cressler
, S. Subbanna
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
54
Scopus citations
Overview
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Keyphrases
SiGe
100%
Strained Si
33%
Si Layer
33%
Tensile Strain
33%
Rapid Growth
33%
Modulation-doped Field-effect Transistor (MODFET)
33%
SiGe BiCMOS
33%
Buffer Layer
33%
Conducting Channels
33%
Poly-SiGe
33%
Material Science
Buffer Layer
100%