The potential of Fe-FET for robust design under variations: A compact modeling study

Keyphrases

• Capacitance 25%
• Capacitance Characteristics 25%
• Compact Modeling 100%
• Electrical Field 25%
• Fast Operation 25%
• Feedback Field-effect Transistor (FBFET) 25%
• Feedback Mechanism 25%
• Ferroelectric Field-effect Transistor (FeFET) 100%
• Ferroelectric Layer 50%
• Ferroelectric Materials 25%
• Gate Insulator 25%
• I-V Characteristics 25%
• Mobile Carrier 25%
• MOSFET Structure 25%
• Negative Capacitance 25%
• Negative Slope 25%
• Non-equilibrium Conditions 25%
• Random Dopant Fluctuation 25%
• Rapid Transition 25%
• Robust Design 100%
• Self-feedback 25%
• Semiconductor Devices 25%
• Surface Potential 25%
• Switching Energy 25%
• Threshold Voltage Distribution 25%
• Voltage Amplifier 25%

Engineering

• Amplifier 25%
• Dopants 25%
• Electric Field 25%
• Equilibrium Condition 25%
• Feedback Mechanism 25%
• Field Effect Transistors 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 25%
• Modeling Study 100%
• Negative Slope 25%
• Nonequilibrium 25%
• Robust Design 100%
• Semiconductor Device 25%
• Surface Potential 25%

Material Science

• Amplifier 25%
• Capacitance 50%
• Doping (Additives) 25%
• Ferroelectric Material 100%
• Field Effect Transistors 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 25%
• Semiconductor Device 25%
• Surface (Surface Science) 25%