TY - GEN
T1 - The influence of thermophoresis effects during deposition of hydrogenated amorphous silicon thin films with nanocrystalline silicon inclusions
AU - Blackwell, C.
AU - Anderson, C.
AU - Deneen, J.
AU - Carter, C. B.
AU - Kortshagen, U.
AU - Kakalios, J.
PY - 2007
Y1 - 2007
N2 - Silicon cluster formation is known to occur within silane plasmas when a capacitively-coupled deposition reactor is operated at high gas chamber pressures. These clusters are sensitive to the thermophoretic forces that will, depending on the sign of the thermal gradient, direct them toward or away from the silicon film's growing surface. We have developed a dual-chamber deposition system that produces nanocrystalline silicon particles (roughly 3-5 nm in diameter) in a flow-through reactor, and injects these particles into a separate capacitively-coupled plasma chamber where the amorphous film is produced. The structural, optical and electronic properties of these mixed-phase materials are investigated as a function of the controllable thermal gradient applied across the silane plasma during deposition.
AB - Silicon cluster formation is known to occur within silane plasmas when a capacitively-coupled deposition reactor is operated at high gas chamber pressures. These clusters are sensitive to the thermophoretic forces that will, depending on the sign of the thermal gradient, direct them toward or away from the silicon film's growing surface. We have developed a dual-chamber deposition system that produces nanocrystalline silicon particles (roughly 3-5 nm in diameter) in a flow-through reactor, and injects these particles into a separate capacitively-coupled plasma chamber where the amorphous film is produced. The structural, optical and electronic properties of these mixed-phase materials are investigated as a function of the controllable thermal gradient applied across the silane plasma during deposition.
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M3 - Conference contribution
AN - SCOPUS:34249940355
SN - 1558998667
SN - 9781558998667
T3 - Materials Research Society Symposium Proceedings
SP - 181
EP - 186
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
T2 - 2006 MRS Spring Meeting
Y2 - 17 April 2006 through 21 April 2006
ER -