The effect of substrate temperature on the morphology of diamond films grown under acetylene-lean and acetylene-rich conditions

John M. Larson, Steven L. Girshick

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The effect of substrate temperature on the morphology of diamond films grown by chemical vapor deposition is examined. Under some conditions increasing substrate temperature causes the film morphology to shift from {100} toward {111} faceting, whereas under other conditions exactly the opposite trend is observed. It is found that the factor that differentiates these two regimes is the abundance of acetylene relative to C1 radicals (mainly CH3 and in some cases C) at the growth surface. This conclusion is reached by comparing two new sets of experiments, in which diamond films were deposited using an RF thermal plasma operating at either 200 or 700 Torr, with each other as well as with other results in the literature for several different growth environments.

Original languageEnglish (US)
Pages (from-to)1584-1593
Number of pages10
JournalDiamond and Related Materials
Volume12
Issue number9
DOIs
StatePublished - Sep 2003

Bibliographical note

Funding Information:
This work was partially supported by the National Science Foundation (CTS-9424271), by the Engineering Research Center on Plasma-Aided Manufacturing, by the Minnesota Supercomputing Institute and by a University of Minnesota Graduate School Doctoral Dissertation Fellowship (for JML).

Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.

Keywords

  • Acetylene-lean and acetylene-rich conditions
  • Diamond films
  • Thermal plasma

Fingerprint Dive into the research topics of 'The effect of substrate temperature on the morphology of diamond films grown under acetylene-lean and acetylene-rich conditions'. Together they form a unique fingerprint.

Cite this