The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films

Meiyin Yang, Lawrence F. Allard, Nian Ji, Xiaowei Zhang, Guang Hua Yu, Jian Ping Wang

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Abstract

Partially ordered Fe-N thin films were grown by a facing target sputtering process on the surface of a (001) Ag underlayer on MgO substrates. It was confirmed by x-ray diffraction that the Ag layer enlarged the in-plane lattice of the Fe-N thin films. Domains of the ordered α″-Fe 16N2 phase within an epitaxial (001) α′- FexN phase were identified by electron diffraction and high-resolution aberration-corrected scanning transmission electron microscopy (STEM) methods. STEM dark-field and bright-field images showed the fully ordered structure of the α″-Fe16N2 at the atomic column level. High saturation magnetization(Ms) of 1890 emu/cc was obtained for α″-Fe16N2 on the Ag underlayer, while only 1500 emu/cc was measured for Fe-N on the Fe underlayer. The results are likely due to a tensile strain induced in the α″-Fe16N 2 phase by the Ag structure at the interface.

Original languageEnglish (US)
Article number242412
JournalApplied Physics Letters
Volume103
Issue number24
DOIs
StatePublished - Dec 9 2013

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