Abstract
It is shown that the spin–orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for bound states formation. The mechanism is realized in 2D materials with a sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.
| Original language | English (US) |
|---|---|
| Article number | 2000501 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 258 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2021 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2020 Wiley-VCH GmbH
Keywords
- Bernevig–Hughes–Zhang model
- bound electron states
- spin–orbit interactions
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