The Coulomb Impurity in 2D Materials with Strong Spin–Orbit Interaction

Yasha Gindikin; Vladimir A. Sablikov

doi:10.1002/pssb.202000501

The Coulomb Impurity in 2D Materials with Strong Spin–Orbit Interaction

Yasha Gindikin, Vladimir A. Sablikov

Research output: Contribution to journal › Article › peer-review

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Abstract

It is shown that the spin–orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for bound states formation. The mechanism is realized in 2D materials with a sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.

Original language	English (US)
Article number	2000501
Journal	Physica Status Solidi (B) Basic Research
Volume	258
Issue number	4
DOIs	https://doi.org/10.1002/pssb.202000501
State	Published - Apr 2021
Externally published	Yes

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Publisher Copyright:
© 2020 Wiley-VCH GmbH

Keywords

Bernevig–Hughes–Zhang model
bound electron states
spin–orbit interactions

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10.1002/pssb.202000501

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abstract = "It is shown that the spin–orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for bound states formation. The mechanism is realized in 2D materials with a sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.",

keywords = "Bernevig–Hughes–Zhang model, bound electron states, spin–orbit interactions",

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AU - Sablikov, Vladimir A.

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N2 - It is shown that the spin–orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for bound states formation. The mechanism is realized in 2D materials with a sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.

AB - It is shown that the spin–orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for bound states formation. The mechanism is realized in 2D materials with a sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.

KW - Bernevig–Hughes–Zhang model

KW - bound electron states

KW - spin–orbit interactions

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

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ER -

The Coulomb Impurity in 2D Materials with Strong Spin–Orbit Interaction

Abstract

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Keywords

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