Testbeam and laboratory characterization of CMS 3D pixel sensors

M. Bubna; D. Bortoletto; E. Alagoz; A. Krzywda; K. Arndt; I. Shipsey; G. Bolla; N. Hinton; A. Kok; T. E. Hansen; A. Summanwar; J. M. Brom; M. Boscardin; J. Chramowicz; J. Cumalat; G. F.Dalla Betta; M. Dinardo; A. Godshalk; M. Jones; M. D. Krohn; A. Kumar; C. M. Lei; R. Mendicino; L. Moroni; L. Perera; M. Povoli; A. Prosser; R. Rivera; A. Solano; M. M. Obertino; S. Kwan; L. Uplegger; L. Vigani; S. Wagner

doi:10.1088/1748-0221/9/07/C07019

Testbeam and laboratory characterization of CMS 3D pixel sensors

M. Bubna, D. Bortoletto, E. Alagoz, A. Krzywda, K. Arndt, I. Shipsey, G. Bolla, N. Hinton, A. Kok, T. E. Hansen, A. Summanwar, J. M. Brom, M. Boscardin, J. Chramowicz, J. Cumalat, G. F.Dalla Betta, M. Dinardo, A. Godshalk, M. Jones, M. D. KrohnA. Kumar, C. M. Lei, R. Mendicino, L. Moroni, L. Perera, M. Povoli, A. Prosser, R. Rivera, A. Solano, M. M. Obertino, S. Kwan, L. Uplegger, L. Vigani, S. Wagner

Physics and Astronomy (Twin Cities)

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2 Scopus citations

Abstract

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented.

Original language	English (US)
Article number	C07019
Journal	Journal of Instrumentation
Volume	9
Issue number	7
DOIs	https://doi.org/10.1088/1748-0221/9/07/C07019
State	Published - Jul 1 2014

Keywords

Radiation-hard detectors
Si microstrip and pad detectors

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10.1088/1748-0221/9/07/C07019

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Bubna, M., Bortoletto, D., Alagoz, E., Krzywda, A., Arndt, K., Shipsey, I., Bolla, G., Hinton, N., Kok, A., Hansen, T. E., Summanwar, A., Brom, J. M., Boscardin, M., Chramowicz, J., Cumalat, J., Betta, G. F. D., Dinardo, M., Godshalk, A., Jones, M., ... Wagner, S. (2014). Testbeam and laboratory characterization of CMS 3D pixel sensors. Journal of Instrumentation, 9(7), Article C07019. https://doi.org/10.1088/1748-0221/9/07/C07019

Bubna, M, Bortoletto, D, Alagoz, E, Krzywda, A, Arndt, K, Shipsey, I, Bolla, G, Hinton, N, Kok, A, Hansen, TE, Summanwar, A, Brom, JM, Boscardin, M, Chramowicz, J, Cumalat, J, Betta, GFD, Dinardo, M, Godshalk, A, Jones, M, Krohn, MD, Kumar, A, Lei, CM, Mendicino, R, Moroni, L, Perera, L, Povoli, M, Prosser, A, Rivera, R, Solano, A, Obertino, MM, Kwan, S, Uplegger, L, Vigani, L & Wagner, S 2014, 'Testbeam and laboratory characterization of CMS 3D pixel sensors', Journal of Instrumentation, vol. 9, no. 7, C07019. https://doi.org/10.1088/1748-0221/9/07/C07019

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abstract = "The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented.",

keywords = "Radiation-hard detectors, Si microstrip and pad detectors",

author = "M. Bubna and D. Bortoletto and E. Alagoz and A. Krzywda and K. Arndt and I. Shipsey and G. Bolla and N. Hinton and A. Kok and Hansen, {T. E.} and A. Summanwar and Brom, {J. M.} and M. Boscardin and J. Chramowicz and J. Cumalat and Betta, {G. F.Dalla} and M. Dinardo and A. Godshalk and M. Jones and Krohn, {M. D.} and A. Kumar and Lei, {C. M.} and R. Mendicino and L. Moroni and L. Perera and M. Povoli and A. Prosser and R. Rivera and A. Solano and Obertino, {M. M.} and S. Kwan and L. Uplegger and L. Vigani and S. Wagner",

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AU - Bubna, M.

AU - Bortoletto, D.

AU - Alagoz, E.

AU - Krzywda, A.

AU - Arndt, K.

AU - Shipsey, I.

AU - Bolla, G.

AU - Hinton, N.

AU - Kok, A.

AU - Hansen, T. E.

AU - Summanwar, A.

AU - Brom, J. M.

AU - Boscardin, M.

AU - Chramowicz, J.

AU - Cumalat, J.

AU - Betta, G. F.Dalla

AU - Dinardo, M.

AU - Godshalk, A.

AU - Jones, M.

AU - Krohn, M. D.

AU - Kumar, A.

AU - Lei, C. M.

AU - Mendicino, R.

AU - Moroni, L.

AU - Perera, L.

AU - Povoli, M.

AU - Prosser, A.

AU - Rivera, R.

AU - Solano, A.

AU - Obertino, M. M.

AU - Kwan, S.

AU - Uplegger, L.

AU - Vigani, L.

AU - Wagner, S.

PY - 2014/7/1

Y1 - 2014/7/1

N2 - The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented.

AB - The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented.

KW - Radiation-hard detectors

KW - Si microstrip and pad detectors

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ER -

Testbeam and laboratory characterization of CMS 3D pixel sensors

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