Abstract
The magnitude of the persistent-photoconductivity (PPC) effect in doping-modulated hydrogenated amorphous silicon (a-Si:H) has been investigated as a function of exposure time and illumination temperature. It is found that the excitation of PPC follows a power-law dependence on the exposure time, where the power-law exponent is temperature dependent. We find that T/T0 where T0570 K, in agreement with predictions of the thermal-equilibration model for PPO. These results support the proposal that in a-Si:H the lattice distortion responsible for the metastable-charge trapping in PPC involves hydrogen motion.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6820-6823 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 43 |
| Issue number | 8 |
| DOIs | |
| State | Published - Jan 1 1991 |