Abstract
Picosecond time resolved THz spectroscopy of transient carriers in semiconductors was performed using synchronized near infrared (NIR) and terahertz lasers. The transient carrier relaxation in GaAs and InSb with varying NIR intensities and magnetic fields was investigated. A theory based on Drude conductivity with time dependent density and density dependent scattering lifetime was used to reproduce the plasma dynamics.
Original language | English (US) |
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Pages (from-to) | 3271-3277 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 5 |
DOIs | |
State | Published - Sep 1 2003 |