Terahertz emission from magneto-plasma oscillations in semiconductors

J. N. Heyman, H. Wrage, C. Lind, D. Hebert, P. Neocleous, P. A. Crowell, T. Müller, K. Unterrainer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We have studied THz emission from bulk InAs and GaAs and from GaAs/AlGaAs quantum wells as a function of magnetic field. Ultrashort pulses of THz radiation were produced at semiconductor surfaces by photoexcitation with a femtosecond Ti-Sapphire laser, and we recorded the THz emission spectrum and the integrated THz power as a function of magnetic field and temperature. In bulk samples the emitted radiation is produced by coupled cyclotron-plasma oscillations: we model THz emission from n-GaAs as magneto-plasma oscillations in a 3-D electron gas. THz emission from a modulation-doped parabolic quantum well is described in terms of coupled intersubband-cyclotron motion. A model including both 3-D plasma oscillations and a 2-D electron gas in a surface accumulation layer is required to describe THz emission from InAs in a magnetic field.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, J.-J. Song
Number of pages7
StatePublished - 2002
EventUltrafast Phenomena in Semiconductors VI - San Jose, CA, United States
Duration: Jan 21 2002Jan 25 2002


OtherUltrafast Phenomena in Semiconductors VI
Country/TerritoryUnited States
CitySan Jose, CA


  • GaAs
  • InAs
  • Magnetic
  • Parabolic quantum well
  • Plasmon
  • Terahertz
  • Ultrafast


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