Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor

Yan Zhu; Deepam Maurya; Shashank Priya; Mantu K. Hudait

doi:10.1021/am405988f

Tensile-strained nanoscale Ge/In_0.16Ga_0.84As heterostructure for tunnel field-effect transistor

Yan Zhu, Deepam Maurya, Shashank Priya, Mantu K. Hudait

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Tensile strained Ge/In_0.16Ga_0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In_0.16Ga_0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In_0.16Ga_0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

Original language	English (US)
Pages (from-to)	4947-4953
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	7
DOIs	https://doi.org/10.1021/am405988f
State	Published - Apr 9 2014
Externally published	Yes

Keywords

high crystalline quality
molecular beam epitaxy
sharp heterointerface
tensile strain
tunnel field-effect transistor

Publisher link

10.1021/am405988f

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@article{4d22ce01662742f08cfa8a58ebed809e,

title = "Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor",

abstract = "Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.",

keywords = "high crystalline quality, molecular beam epitaxy, sharp heterointerface, tensile strain, tunnel field-effect transistor",

author = "Yan Zhu and Deepam Maurya and Shashank Priya and Hudait, {Mantu K.}",

year = "2014",

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T1 - Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor

AU - Zhu, Yan

AU - Maurya, Deepam

AU - Priya, Shashank

AU - Hudait, Mantu K.

PY - 2014/4/9

Y1 - 2014/4/9

N2 - Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

AB - Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

KW - high crystalline quality

KW - molecular beam epitaxy

KW - sharp heterointerface

KW - tensile strain

KW - tunnel field-effect transistor

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