Temperature-independent transport in high-mobility dinaphtho-thieno- thiophene (DNTT) single crystal transistors

Wei Xie; Kristin Willa; Yanfei Wu; Roger Häusermann; Kazuo Takimiya; Bertram Batlogg; C. Daniel Frisbie

doi:10.1002/adma.201300886

Temperature-independent transport in high-mobility dinaphtho-thieno- thiophene (DNTT) single crystal transistors

Wei Xie
, Kristin Willa
, Yanfei Wu
, Roger Häusermann
, Kazuo Takimiya
, Bertram Batlogg
, C. Daniel Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

141 Scopus citations

Abstract

The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm² V^-1 s^-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.

Original language	English (US)
Pages (from-to)	3478-3484
Number of pages	7
Journal	Advanced Materials
Volume	25
Issue number	25
DOIs	https://doi.org/10.1002/adma.201300886
State	Published - Jul 5 2013

Keywords

DNTT single crystals
temperature independent transport
trap density of states
weak mobility anisotropy

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10.1002/adma.201300886

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abstract = "The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V-1 s-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.",

keywords = "DNTT single crystals, temperature independent transport, trap density of states, weak mobility anisotropy",

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AU - Xie, Wei

AU - Willa, Kristin

AU - Wu, Yanfei

AU - Häusermann, Roger

AU - Takimiya, Kazuo

AU - Batlogg, Bertram

AU - Frisbie, C. Daniel

PY - 2013/7/5

Y1 - 2013/7/5

N2 - The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V-1 s-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.

AB - The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V-1 s-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.

KW - DNTT single crystals

KW - temperature independent transport

KW - trap density of states

KW - weak mobility anisotropy

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UR - https://www.scopus.com/pages/publications/84879684255#tab=citedBy

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JO - Advanced Materials

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IS - 25

ER -

Temperature-independent transport in high-mobility dinaphtho-thieno- thiophene (DNTT) single crystal transistors

Abstract

Keywords

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