Abstract
The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V-1 s-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.
Original language | English (US) |
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Pages (from-to) | 3478-3484 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 25 |
Issue number | 25 |
DOIs | |
State | Published - Jul 5 2013 |
Keywords
- DNTT single crystals
- temperature independent transport
- trap density of states
- weak mobility anisotropy