Temperature-independent transport in high-mobility dinaphtho-thieno- thiophene (DNTT) single crystal transistors

Wei Xie, Kristin Willa, Yanfei Wu, Roger Häusermann, Kazuo Takimiya, Bertram Batlogg, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

111 Scopus citations


The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V-1 s-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.

Original languageEnglish (US)
Pages (from-to)3478-3484
Number of pages7
JournalAdvanced Materials
Issue number25
StatePublished - Jul 5 2013


  • DNTT single crystals
  • temperature independent transport
  • trap density of states
  • weak mobility anisotropy


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