Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe2

L. R. Thoutam, Y. L. Wang, Z. L. Xiao, S. Das, A. Luican-Mayer, R. Divan, G. W. Crabtree, W. K. Kwok

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102 Scopus citations

Abstract

Extremely large magnetoresistance (XMR) was recently discovered in WTe2, triggering extensive research on this material regarding the XMR origin. Since WTe2 is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe2: (1) WTe2 is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(θH) with θ=(cos2θ+γ-2sin2θ)1/2, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe2, including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

Original languageEnglish (US)
Article number046602
JournalPhysical review letters
Volume115
Issue number4
DOIs
StatePublished - Jul 22 2015

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