Abstract
The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85°C despite a 10x increase in dark current compared to room temperature.
| Original language | English (US) |
|---|---|
| Article number | 1708205 |
| Pages (from-to) | 179-181 |
| Number of pages | 3 |
| Journal | IEEE International Conference on Group IV Photonics GFP |
| State | Published - Dec 1 2006 |
| Event | 2006 3rd IEEE International Conference on Group IV Photonics, GFP 2006 - Ottawa, ON, Canada Duration: Sep 13 2006 → Sep 15 2006 |