Temperature-dependent analysis of Ge-on-SOI photodetectors and receivers

S. J. Koester; L. Schares; C. L. Schow; G. Dehlinger; R. A. John

Temperature-dependent analysis of Ge-on-SOI photodetectors and receivers

S. J. Koester, L. Schares, C. L. Schow, G. Dehlinger, R. A. John

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

43 Scopus citations

Abstract

The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85°C despite a 10x increase in dark current compared to room temperature.

Original language	English (US)
Article number	1708205
Pages (from-to)	179-181
Number of pages	3
Journal	IEEE International Conference on Group IV Photonics GFP
State	Published - Dec 1 2006
Event	2006 3rd IEEE International Conference on Group IV Photonics, GFP 2006 - Ottawa, ON, Canada Duration: Sep 13 2006 → Sep 15 2006

Find It

Find It at U of M Libraries

Cite this

@article{eae2395798694a6d93184761eb8f9c0c,

title = "Temperature-dependent analysis of Ge-on-SOI photodetectors and receivers",

abstract = "The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85°C despite a 10x increase in dark current compared to room temperature.",

author = "Koester, {S. J.} and L. Schares and Schow, {C. L.} and G. Dehlinger and John, {R. A.}",

year = "2006",

month = dec,

day = "1",

language = "English (US)",

pages = "179--181",

journal = "IEEE International Conference on Group IV Photonics GFP",

issn = "1949-2081",

publisher = "IEEE Computer Society",

note = "2006 3rd IEEE International Conference on Group IV Photonics, GFP 2006 ; Conference date: 13-09-2006 Through 15-09-2006",

}

TY - JOUR

T1 - Temperature-dependent analysis of Ge-on-SOI photodetectors and receivers

AU - Koester, S. J.

AU - Schares, L.

AU - Schow, C. L.

AU - Dehlinger, G.

AU - John, R. A.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85°C despite a 10x increase in dark current compared to room temperature.

AB - The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85°C despite a 10x increase in dark current compared to room temperature.

UR - http://www.scopus.com/inward/record.url?scp=78649732580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649732580&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:78649732580

SN - 1949-2081

SP - 179

EP - 181

JO - IEEE International Conference on Group IV Photonics GFP

JF - IEEE International Conference on Group IV Photonics GFP

M1 - 1708205

T2 - 2006 3rd IEEE International Conference on Group IV Photonics, GFP 2006

Y2 - 13 September 2006 through 15 September 2006

ER -

Temperature-dependent analysis of Ge-on-SOI photodetectors and receivers

Abstract

Find It

Other files and links

Fingerprint

Cite this