Temperature-dependent analysis of Ge-on-SOI photodetectors and receivers

S. J. Koester, L. Schares, C. L. Schow, G. Dehlinger, R. A. John

Research output: Contribution to journalConference articlepeer-review

37 Scopus citations

Abstract

The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85°C despite a 10x increase in dark current compared to room temperature.

Original languageEnglish (US)
Article number1708205
Pages (from-to)179-181
Number of pages3
JournalIEEE International Conference on Group IV Photonics GFP
StatePublished - Dec 1 2006
Event2006 3rd IEEE International Conference on Group IV Photonics, GFP 2006 - Ottawa, ON, Canada
Duration: Sep 13 2006Sep 15 2006

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