The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85°C despite a 10x increase in dark current compared to room temperature.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE International Conference on Group IV Photonics GFP|
|State||Published - Dec 1 2006|
|Event||2006 3rd IEEE International Conference on Group IV Photonics, GFP 2006 - Ottawa, ON, Canada|
Duration: Sep 13 2006 → Sep 15 2006