Temperature dependence of cathodoluminescence in n-type gallium arsenide

G. A.C. Jones, B. R. Nag, A. Gopinath

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A theory has been developed for the temperature dependence of intensity of cathodoluminescence in 'n'-type GaAs in the range 150-500 K. The dependence is seen to arise almost entirely from the temperature dependence of τr the radiative lifetime. The theoretical dependence has been computed and compared with experimental results and shows good agreement in this range.

Original languageEnglish (US)
Article number326
Pages (from-to)183-193
Number of pages11
JournalJournal of Physics D: Applied Physics
Issue number1
StatePublished - Dec 1 1974


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