A theory has been developed for the temperature dependence of intensity of cathodoluminescence in 'n'-type GaAs in the range 150-500 K. The dependence is seen to arise almost entirely from the temperature dependence of τr the radiative lifetime. The theoretical dependence has been computed and compared with experimental results and shows good agreement in this range.
|Original language||English (US)|
|Number of pages||11|
|Journal||Journal of Physics D: Applied Physics|
|State||Published - Dec 1 1974|