Telegraphic switching signals by magnet tunnel junctions for neural spiking signals with high information capacity

Brandon R. Zink, Yang Lv, Jianping Wang

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Magnetic tunnel junctions (MTJs) operating in the superparamagnetic regime produce telegraphic signals that emulate neural spiking signals. Previous studies have characterized the random spiking signals produced by MTJs in terms of the percentage of time spent in the anti-parallel (AP) magnetization state (referred to as the "AP rate") but ignore the switching rate of the MTJ. In this work, we demonstrate that with proper tuning of both an external bias field and a bias voltage, we can control the average dwell time in the AP-state and P-state pulses separately. Our data show that the AP rate can be tuned with bias voltages ranging from 310 mV to 460 mV and bias fields from -200 Oe to -230 Oe. The average dwell times in each state ranged from 225 ns to 285 μs and could be controlled separately. This suggests that neural spiking signals produced by MTJs can be decoded by both the spike rate and the spike count, which creates the possibility for increasing the information capacity in the rate coding scheme.

Original languageEnglish (US)
Article number152121
JournalJournal of Applied Physics
Issue number15
StatePublished - Oct 21 2018

Bibliographical note

Funding Information:
This work is supported in part by the Center for Probabilistic Spin Logic for Low-Energy Boolean and Non-Boolean Computing (CAPSL), one of the Nanoelectronic Computing Research (nCORE) centers as task 2759.001, and a Semiconductor Research Corporation (SRC) program sponsored by the National Science Foundation (NSF) through 1739635.

Publisher Copyright:
© 2018 Author(s).

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