Telegraph noise as a probe of microscopic hydrogen motion in amorphous silicon

Lisa M. Lust, J. Kakalios

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


Time traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.

Original languageEnglish (US)
Pages (from-to)401-406
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995


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