Telegraph noise as a probe of microscopic hydrogen motion in amorphous silicon

Lisa M. Lust; J. Kakalios

doi:10.1557/proc-377-401

Telegraph noise as a probe of microscopic hydrogen motion in amorphous silicon

Lisa M. Lust, J. Kakalios

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Time traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.

Original language	English (US)
Pages (from-to)	401-406
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	377
DOIs	https://doi.org/10.1557/proc-377-401
State	Published - Jan 1 1995
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 21 1995

Publisher link

10.1557/proc-377-401

Find It

Find It at U of M Libraries

Cite this

@article{b470854ee19244c19279223c366a58e1,

title = "Telegraph noise as a probe of microscopic hydrogen motion in amorphous silicon",

abstract = "Time traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.",

author = "Lust, {Lisa M.} and J. Kakalios",

year = "1995",

month = jan,

day = "1",

doi = "10.1557/proc-377-401",

language = "English (US)",

volume = "377",

pages = "401--406",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 17-04-1995 Through 21-04-1995",

}

TY - JOUR

T1 - Telegraph noise as a probe of microscopic hydrogen motion in amorphous silicon

AU - Lust, Lisa M.

AU - Kakalios, J.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Time traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.

AB - Time traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.

UR - http://www.scopus.com/inward/record.url?scp=0029519778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029519778&partnerID=8YFLogxK

U2 - 10.1557/proc-377-401

DO - 10.1557/proc-377-401

M3 - Conference article

AN - SCOPUS:0029519778

SN - 0272-9172

VL - 377

SP - 401

EP - 406

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 21 April 1995

ER -

Telegraph noise as a probe of microscopic hydrogen motion in amorphous silicon

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this