TDDB in HfSiON/SiO₂ dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment

Keyphrases

• Silica 100%
• Transistor 100%
• Probe-based 100%
• Gate Dielectric Layer 100%
• Modeling Experiment 100%
• Modeling Prediction 100%
• Dielectric Stack 100%
• HfSiON 100%
• Stress-induced 50%
• Gate Dielectric 50%
• Leakage Current 50%
• Percolation Model 50%
• HfO2 50%
• Stress Conditions 50%
• Probing Method 50%
• Failure Time 50%
• Simulation Methodology 50%
• Gate Current 50%
• Defect Formation 50%
• Pre-existing Defects 50%
• Induced Defects 50%
• High Integration 50%
• Integration Density 50%
• Low Leakage Current 50%
• Gate Leakage Current 50%
• Current Characteristics 50%
• Planar Device 50%
• Metal Gate 50%
• Current Integration 50%
• Post-breakdown 50%

Engineering

• Dielectrics 100%
• Gate Dielectric 100%
• Silicon Dioxide 100%
• Dielectric Layer 66%
• Measured Data 33%
• High Integration Density 33%
• Stress Condition 33%
• Metal Gate 33%
• Induced Defect 33%
• Periodic Time 33%

Material Science

• Dielectric Material 100%
• Transistor 50%
• Density 25%
• Percolation 25%