TDDB in HfSiON/SiO2 dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment

Ahmed Kamal Reza; Mohammad Khaled Hassan; Kaushik Roy; Devyani Patra; Ankita Bansal; Yu Cao

doi:10.1109/IRPS.2017.7936362

TDDB in HfSiON/SiO₂ dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment

Ahmed Kamal Reza, Mohammad Khaled Hassan, Kaushik Roy, Devyani Patra, Ankita Bansal, Yu Cao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

HfO2 based high-κ metal gate (HKMG) transistors offer low leakage current and high integration density. However, they are vulnerable to defect formation. In this paper, we have demonstrated a Büttiker probe based leakage current model [1][2] for determining the gate leakage current in a HKMG transistor due to defects in the gate dielectric layer. These defects can be pre-existing defects (PEDs) as well as the stress induced defects in the gate dielectric stack. The model was also used to determine the post breakdown gate current characteristics. We have verified our model with experimentally measured data from 28nm planar devices with HfSiON/SiO₂ gate dielectric layer. In addition, we have integrated the Büttiker probe method and percolation model [3] to predict the time to failure (t_BD) of the device. The proposed simulation methodology can also be used to determine the required stress condition (SC) to observe breakdown in a device within a certain period of time.

Original language	English (US)
Title of host publication	2017 International Reliability Physics Symposium, IRPS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	DG5.1-DG5.6
ISBN (Electronic)	9781509066407
DOIs	https://doi.org/10.1109/IRPS.2017.7936362
State	Published - May 30 2017
Externally published	Yes
Event	2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States Duration: Apr 2 2017 → Apr 6 2017

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	2017 International Reliability Physics Symposium, IRPS 2017
Country/Territory	United States
City	Monterey
Period	4/2/17 → 4/6/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

Breakdown Prediction
Büttiker probe
HfSiON
Non-equilibrium Green's function (NEGF)
Stress Induced Leakage Current (SILC)
Temperature Stress
Time dependent Dielectric Breakdown (TDDB)
Voltage Stress
Weibull
high-κ metal gate (HKMG)

Publisher link

10.1109/IRPS.2017.7936362

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Cite this

Reza, A. K., Hassan, M. K., Roy, K., Patra, D., Bansal, A., & Cao, Y. (2017). TDDB in HfSiON/SiO₂ dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment. In 2017 International Reliability Physics Symposium, IRPS 2017 (pp. DG5.1-DG5.6). Article 7936362 (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2017.7936362

TDDB in HfSiON/SiO₂ dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment. / Reza, Ahmed Kamal; Hassan, Mohammad Khaled; Roy, Kaushik et al.
2017 International Reliability Physics Symposium, IRPS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. DG5.1-DG5.6 7936362 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Reza, AK, Hassan, MK, Roy, K, Patra, D, Bansal, A & Cao, Y 2017, TDDB in HfSiON/SiO₂ dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment. in 2017 International Reliability Physics Symposium, IRPS 2017., 7936362, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. DG5.1-DG5.6, 2017 International Reliability Physics Symposium, IRPS 2017, Monterey, United States, 4/2/17. https://doi.org/10.1109/IRPS.2017.7936362

Reza AK, Hassan MK, Roy K, Patra D, Bansal A, Cao Y. TDDB in HfSiON/SiO₂ dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment. In 2017 International Reliability Physics Symposium, IRPS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. DG5.1-DG5.6. 7936362. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2017.7936362

Reza, Ahmed Kamal ; Hassan, Mohammad Khaled ; Roy, Kaushik et al. / TDDB in HfSiON/SiO₂ dielectric stack : Büttiker probe based NEGF modeling, prediction and experiment. 2017 International Reliability Physics Symposium, IRPS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. DG5.1-DG5.6 (IEEE International Reliability Physics Symposium Proceedings).

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abstract = "HfO2 based high-κ metal gate (HKMG) transistors offer low leakage current and high integration density. However, they are vulnerable to defect formation. In this paper, we have demonstrated a B{\"u}ttiker probe based leakage current model [1][2] for determining the gate leakage current in a HKMG transistor due to defects in the gate dielectric layer. These defects can be pre-existing defects (PEDs) as well as the stress induced defects in the gate dielectric stack. The model was also used to determine the post breakdown gate current characteristics. We have verified our model with experimentally measured data from 28nm planar devices with HfSiON/SiO2 gate dielectric layer. In addition, we have integrated the B{\"u}ttiker probe method and percolation model [3] to predict the time to failure (tBD) of the device. The proposed simulation methodology can also be used to determine the required stress condition (SC) to observe breakdown in a device within a certain period of time.",

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