Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors

Sarah L. Swisher, Steven K. Volkman, Vivek Subramanian

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm2/(V s) and an on/off current ratio greater than 1 × 106. These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics.

Original languageEnglish (US)
Pages (from-to)10069-10075
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number19
DOIs
StatePublished - May 20 2015

Keywords

  • In<inf>2</inf>O<inf>3</inf>
  • indium oxide
  • nanocrystal synthesis
  • nanocrystal transistor
  • printed electronics
  • solution processing
  • thin-film transistor

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