Synthesis and electrical behavior of VO2thin films grown on SrRuO3electrode layers

Chengyang Zhang, Ravindra Singh Bisht, Amin Nozariasbmarz, Arnob Saha, Chan Su Han, Qi Wang, Yifan Yuan, Abhronil Sengupta, Shashank Priya, Shriram Ramanathan

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4 Scopus citations


VO2 thin films were grown on conducting oxide underlayer SrRuO3 buffered SrTiO3 (111) and Si/SiO2 substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO2 films grown on SrRuO3 buffered SrTiO3 and polycrystalline structure for films grown on SrRuO3 buffered Si/SiO2. X-ray photoelectron spectroscopy confirms a dominant presence of V4+ in both films and establishes a high-quality growth of single-phase VO2 films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57-3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO3 bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. The results demonstrate the growth of high-quality VO2 on conducting SrRuO3 layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

Original languageEnglish (US)
Article number043405
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - Jul 1 2022

Bibliographical note

Funding Information:
This work was primarily supported by Center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences under Award No. DE-SC0021118.

Publisher Copyright:
© 2022 Author(s).


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