Synthesis and characterization of high-quality In2O3 nanobelts via catalyst-free growth using a simple physical vapor deposition at low temperature

J. S. Jeong, J. Y. Lee, C. J. Lee, S. J. An, G. C. Yi

Research output: Contribution to journalArticlepeer-review

128 Scopus citations

Abstract

High-quality indium oxide (In2O3) nanobelts were successfully synthesized without catalyst at low temperature ranged from 600 to 850°C using a simple physical vapor deposition. To synthesize the In 2O3 nanobelts, we employed a simple reaction of thermally evaporated indium vapor in a wet oxidizing environment. The In2O 3 nanobelts have diameters in the range of 20-200 nm and lengths over several hundreds micrometer. The synthesized nanobelts indicate high-purity and single-crystalline cubic structure. Most of In2O 3 nanobelts have 〈100〉 growth direction but some nanobelts have 〈110〉 growth direction. Photoluminescence spectra under excitation at 325 nm showed a strong and broad emission at 570 nm with a shoulder at 630 nm related to oxygen vacancies. We suggest that the synthesis of the In2O3 nanobelts follows the self-assisted growth mechanism in our method.

Original languageEnglish (US)
Pages (from-to)246-250
Number of pages5
JournalChemical Physics Letters
Volume384
Issue number4-6
DOIs
StatePublished - Jan 26 2004

Bibliographical note

Funding Information:
The authors acknowledge the support of this research by the Ministry of Science, Technology of Korea through the National Research Laboratory Program, and Center for Nanotubes and Nanostructured Composites at SKKU in Korea.

Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.

Fingerprint

Dive into the research topics of 'Synthesis and characterization of high-quality In<sub>2</sub>O<sub>3</sub> nanobelts via catalyst-free growth using a simple physical vapor deposition at low temperature'. Together they form a unique fingerprint.

Cite this