Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors

Yang Su, Chaitanya U. Kshirsagar, Matthew C. Robbins, Nazila Haratipour, Steven J. Koester

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


The operation of an integrated two-dimensional complementary metal¡Voxide¡Vsemiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET fabricated using a common local backgate electrode with thin (20 nm) HfO2 gate dielectric. The constituent devices have linear threshold voltages of-0.8 V and +0.8 Vand produce peak transconductances of 16 μgS μgm-1 and 41 μgS μgm-1 for the MoS2 n-MOSFET and BP p-MOSFET, respectively. The inverter shows a voltage gain of 3.5 at a supply voltage, VDD ≥Q=2.5 V, and has peak switching current of 108 μgA and off-state current of 8.4 μgA (2.4 μgA) at VIN=0 (VIN=2.5 V). In addition, the inverter has voltage gain greater than unity for VDD ≥ 0.5 V, has open butterfly curves for VDD ≥ 1 V, and achieves static noise margin over 500mV at VDD=2.5 V. The voltage gain was found to be insensitive to temperature between 270 and 340 K, and AClarge and small-signal operation was demonstrated at frequencies up to 100 kHz. The demonstration of a complementary 2D inverter which operates in a symmetric voltage window suitable for driving a subsequent logic stage is a significant step forward in developing practical applications for devices based upon 2D materials.

Original languageEnglish (US)
Article number011006
Journal2D Materials
Issue number1
StatePublished - Feb 1 2016


  • Black phosphorus
  • CMOS
  • Inverter
  • Logic circuit
  • MoS
  • Transistor

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 2

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