TY - GEN
T1 - Suspended carbon nanotube thin film structures with high degree of alignment for NEMS switch applications
AU - Lee, Dongjin
AU - Ye, Zhijiang
AU - Campbell, Stephen A.
AU - Cui, Tianhong
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - We describe microfluidic channel assisted carbon nanotube (CNT) alignment followed by microfabrication and characterization of a suspended CNT thin film. The alignment of CNT is enhanced by heating the CNT dispersion, which is characterized with Raman spectroscopy yielding a high G- to D-band intensity ratio of 22 along the microfluidic flow direction. The sidewall of CNT film pattern, left in a lift-off process, is eliminated by oxygen plasma etching. The resistivity of aligned CNT film is found as 1.45 × 103 ωcm. The aligned CNT film is released by etching a sacrificial layer of amorphous silicon and characterized mechanically demonstrating a nominal high Young's modulus of 635 GPa and a yield strength of 2.4 GPa through a fixed-end beam deflection test. The lithography compatible fabrication process and the highly conductive film with an excellent mechanical property enable the aligned CNT film to be a potent candidate for nanoelectromechanical device applications.
AB - We describe microfluidic channel assisted carbon nanotube (CNT) alignment followed by microfabrication and characterization of a suspended CNT thin film. The alignment of CNT is enhanced by heating the CNT dispersion, which is characterized with Raman spectroscopy yielding a high G- to D-band intensity ratio of 22 along the microfluidic flow direction. The sidewall of CNT film pattern, left in a lift-off process, is eliminated by oxygen plasma etching. The resistivity of aligned CNT film is found as 1.45 × 103 ωcm. The aligned CNT film is released by etching a sacrificial layer of amorphous silicon and characterized mechanically demonstrating a nominal high Young's modulus of 635 GPa and a yield strength of 2.4 GPa through a fixed-end beam deflection test. The lithography compatible fabrication process and the highly conductive film with an excellent mechanical property enable the aligned CNT film to be a potent candidate for nanoelectromechanical device applications.
KW - Carbon nanotube
KW - NEMS switch
KW - alignment
KW - microfluidics
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U2 - 10.1109/TRANSDUCERS.2011.5969783
DO - 10.1109/TRANSDUCERS.2011.5969783
M3 - Conference contribution
AN - SCOPUS:80052131947
SN - 9781457701573
T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
SP - 625
EP - 628
BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Y2 - 5 June 2011 through 9 June 2011
ER -
