Abstract
Auger electron spectroscopy (AES) has been used to understand the nature of the surfaces of the top atomic layers of high-T//c sputter-deposited films of Nb//3Ge. Pb-Nb//3Ge tunneling junctions of high quality have been fabricated with oxidized thin aluminum barriers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 404-406 |
| Number of pages | 3 |
| Journal | AIP Conf Proc |
| Volume | 44 |
| Issue number | 1 |
| State | Published - Jan 1 1978 |