Auger electron spectroscopy (AES) has been used to understand the nature of the surfaces of the top atomic layers of high-T//c sputter-deposited films of Nb//3Ge. Pb-Nb//3Ge tunneling junctions of high quality have been fabricated with oxidized thin aluminum barriers.
|Original language||English (US)|
|Number of pages||3|
|Journal||AIP Conf Proc|
|State||Published - Jan 1 1978|