Abstract
Auger electron spectroscopy (AES) has been used to understand the nature of the surfaces of the top atomic layers of high-T//c sputter-deposited films of Nb//3Ge. Pb-Nb//3Ge tunneling junctions of high quality have been fabricated with oxidized thin aluminum barriers.
Original language | English (US) |
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Pages (from-to) | 404-406 |
Number of pages | 3 |
Journal | AIP Conf Proc |
Volume | 44 |
Issue number | 1 |
State | Published - Jan 1 1978 |