Surface-State-Dominated Spin-Charge Current Conversion in Topological-Insulator-Ferromagnetic-Insulator Heterostructures

Hailong Wang; James Kally; Joon Sue Lee; Tao Liu; Houchen Chang; Danielle Reifsnyder Hickey; K. Andre Mkhoyan; Mingzhong Wu; Anthony Richardella; Nitin Samarth

doi:10.1103/PhysRevLett.117.076601

Surface-State-Dominated Spin-Charge Current Conversion in Topological-Insulator-Ferromagnetic-Insulator Heterostructures

Hailong Wang, James Kally, Joon Sue Lee, Tao Liu, Houchen Chang, Danielle Reifsnyder Hickey, K. Andre Mkhoyan, Mingzhong Wu, Anthony Richardella, Nitin Samarth

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Abstract

We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films - Bi2Se3 and (Bi,Sb)2Te3 - deposited by molecular beam epitaxy on Y3Fe5O12 thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (λIREE), increases dramatically as the film thickness is increased from two quintuple layers, saturating above six quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological-insulator-ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of Y3Fe5O12/(Bi,Sb)2Te3 heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and λIREE.

Original language	English (US)
Article number	076601
Journal	Physical review letters
Volume	117
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.117.076601
State	Published - Aug 11 2016

Bibliographical note

Funding Information:
The work at Penn State, Colorado State, and University of Minnesota is supported by the Center for Spintronic Materials, Interfaces, and Novel Architectures (C-SPIN), a funded center of STARnet, a Semiconductor Research Corporation (SRC) program sponsored by MARCO and DARPA. N.S. and A.R. acknowledge additional support from ONR- N00014-15-1-2364. T.L., H.C., and M.W. acknowledge additional support from NSF-ECCS-1231598 and ARO-W911NF-14-1-0501. This work utilized (1) the College of Science and Engineering (CSE) Characterization Facility, University of Minnesota (UM), supported in part by NSF through the UMN MRSEC program (No. DMR-1420013); and (2) the CSE Minnesota Nano Center, UM, supported in part by NSF through the NNIN program.

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© 2016 American Physical Society.

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@article{735cbba7361e493a912b18a6cb90ba07,

title = "Surface-State-Dominated Spin-Charge Current Conversion in Topological-Insulator-Ferromagnetic-Insulator Heterostructures",

abstract = "We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films - Bi2Se3 and (Bi,Sb)2Te3 - deposited by molecular beam epitaxy on Y3Fe5O12 thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (λIREE), increases dramatically as the film thickness is increased from two quintuple layers, saturating above six quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological-insulator-ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of Y3Fe5O12/(Bi,Sb)2Te3 heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and λIREE.",

author = "Hailong Wang and James Kally and Lee, {Joon Sue} and Tao Liu and Houchen Chang and Hickey, {Danielle Reifsnyder} and Mkhoyan, {K. Andre} and Mingzhong Wu and Anthony Richardella and Nitin Samarth",

note = "Funding Information: The work at Penn State, Colorado State, and University of Minnesota is supported by the Center for Spintronic Materials, Interfaces, and Novel Architectures (C-SPIN), a funded center of STARnet, a Semiconductor Research Corporation (SRC) program sponsored by MARCO and DARPA. N.S. and A.R. acknowledge additional support from ONR- N00014-15-1-2364. T.L., H.C., and M.W. acknowledge additional support from NSF-ECCS-1231598 and ARO-W911NF-14-1-0501. This work utilized (1) the College of Science and Engineering (CSE) Characterization Facility, University of Minnesota (UM), supported in part by NSF through the UMN MRSEC program (No. DMR-1420013); and (2) the CSE Minnesota Nano Center, UM, supported in part by NSF through the NNIN program. Publisher Copyright: {\textcopyright} 2016 American Physical Society.",

year = "2016",

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doi = "10.1103/PhysRevLett.117.076601",

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AU - Wang, Hailong

AU - Kally, James

AU - Lee, Joon Sue

AU - Liu, Tao

AU - Chang, Houchen

AU - Hickey, Danielle Reifsnyder

AU - Mkhoyan, K. Andre

AU - Wu, Mingzhong

AU - Richardella, Anthony

AU - Samarth, Nitin

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PY - 2016/8/11

Y1 - 2016/8/11

N2 - We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films - Bi2Se3 and (Bi,Sb)2Te3 - deposited by molecular beam epitaxy on Y3Fe5O12 thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (λIREE), increases dramatically as the film thickness is increased from two quintuple layers, saturating above six quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological-insulator-ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of Y3Fe5O12/(Bi,Sb)2Te3 heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and λIREE.

AB - We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films - Bi2Se3 and (Bi,Sb)2Te3 - deposited by molecular beam epitaxy on Y3Fe5O12 thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (λIREE), increases dramatically as the film thickness is increased from two quintuple layers, saturating above six quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological-insulator-ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of Y3Fe5O12/(Bi,Sb)2Te3 heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and λIREE.

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Surface-State-Dominated Spin-Charge Current Conversion in Topological-Insulator-Ferromagnetic-Insulator Heterostructures

Abstract

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Surface-State-Dominated Spin-Charge Current Conversion in Topological-Insulator-Ferromagnetic-Insulator Heterostructures

Abstract

Bibliographical note

MRSEC Support

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MRSEC IRG-2: Sustainable Nanocrystal Materials

University of Minnesota MRSEC (DMR-1420013)

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