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Surface reconstructions and growth mode transitions of AlAs(100)
A. M. Dabiran
, P. I. Cohen
Electrical and Computer Engineering
Research output
:
Contribution to journal
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Article
›
peer-review
33
Scopus citations
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Keyphrases
Surface Growth
100%
Reconstruction Mode
100%
Growth Form
100%
Surface Reconstruction
100%
Arsenic Fluxes
100%
Mode Transition
100%
Low Temperature
66%
High Temperature
66%
GaAs(100)
66%
Annealing
33%
Molecular Beam Epitaxy
33%
Substrate Temperature
33%
High Arsenic
33%
Temperature Zones
33%
Reflection High-energy Electron Diffraction
33%
Intensity Oscillations
33%
Diffraction Intensity
33%
Temperature Reconstruction
33%
Mid-temperature
33%
Three-dimensional Features
33%
Middle Temperature
33%
Engineering
Arsenic
100%
Growth Mode
100%
Low-Temperature
66%
Gallium Arsenide
66%
Substrate Temperature
33%
Temperature Region
33%
High energy electron diffraction
33%