Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy

Kanan P. Puntambekar, Paul V. Pesavento, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

265 Scopus citations

Abstract

The surface potential imaging and profiling experiments by Kelvin probe force microscopy (KFM) was used to examine the role of contacts in bottom and top contact pentacene thin-film transistors (TFT). It was shown that KFM is sensitive to subsurface potential changes in the thin TFT accumulation layer, which was confined to the monolayers at the dielectric interfaces. The maps were used to identify bottlenecks to charge transport in conjunction with drain current measurements. The results demonstrates the utility of KFM for generating potential maps of operating pentacene TFT.

Original languageEnglish (US)
Pages (from-to)5539-5541
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number26
DOIs
StatePublished - Dec 29 2003

Bibliographical note

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

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