Tunneling junctions with Pb electrodes have been fabricated with artificial barriers of Er(OH)//3 and Ho(OH)//3 which are an antiferromagnet and a ferromagnet respectively. Conductance vs. voltage characteristics suggest the presence of spin-disorder scattering from the barrier, and in the case of a ferromagnetic barrier, spin-dependent inelastic tunneling.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Number of pages||2|
|State||Published - Dec 1 1984|