TY - JOUR
T1 - Substrate-temperature-dependent structural and optical properties of ZnSe thin films fabricated by using an electron beam evaporation technique
AU - Kissinger, N. J.Suthan
AU - Velmurugan, Natarajan
AU - Perumal, K.
PY - 2009/10
Y1 - 2009/10
N2 - Zinc-Selenide (ZnSe) thin films were prepared by using physical vapor deposition under a vacuum of 5 × 10-6 Torr by using an electron beam evaporated technique at different substrate temperatures, RT, 100, 200, and 300 °C. X-ray diffraction analysis (XRD) indicates that the films are polycrystalline, having a f.c.c zincblende structure irrespective of their substrate temperature. All the films show preferred orientation along the (111) plane parallel to the substrates. The microstructural parameters, such as the lattice constant, crystallite size, stress, strain, and dislocation density, are calculated, and the effect of substrate temperature on the deposited films was discussed. The grain size of the deposited ZnSe films is observed to be small and is within the range of 12 to 32 nm, and the grain size is observed to be increase from 12.5 to 31.9 nm with increasing substrate temperature. Optical measurements indicate the existence of a direct-bandgap-allowed optical transition with a corresponding energy gap in the range of 2.95-2.70 eV.
AB - Zinc-Selenide (ZnSe) thin films were prepared by using physical vapor deposition under a vacuum of 5 × 10-6 Torr by using an electron beam evaporated technique at different substrate temperatures, RT, 100, 200, and 300 °C. X-ray diffraction analysis (XRD) indicates that the films are polycrystalline, having a f.c.c zincblende structure irrespective of their substrate temperature. All the films show preferred orientation along the (111) plane parallel to the substrates. The microstructural parameters, such as the lattice constant, crystallite size, stress, strain, and dislocation density, are calculated, and the effect of substrate temperature on the deposited films was discussed. The grain size of the deposited ZnSe films is observed to be small and is within the range of 12 to 32 nm, and the grain size is observed to be increase from 12.5 to 31.9 nm with increasing substrate temperature. Optical measurements indicate the existence of a direct-bandgap-allowed optical transition with a corresponding energy gap in the range of 2.95-2.70 eV.
KW - Electron beam evaporation
KW - Optical
KW - Structural
KW - ZnSe thin films
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U2 - 10.3938/jkps.55.1577
DO - 10.3938/jkps.55.1577
M3 - Article
AN - SCOPUS:72149084648
SN - 0374-4884
VL - 55
SP - 1577
EP - 1581
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 4
ER -