Substrate modified growth of epitaxial Fe films (abstract)

S. Batra; A. M. Wowchak; Philip I Cohen; D. K. Lottis; E D Dahlberg

doi:10.1063/1.340681

Substrate modified growth of epitaxial Fe films (abstract)

S. Batra, A. M. Wowchak, Philip I Cohen, D. K. Lottis, E D Dahlberg

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Abstract

It is now clear that both the atomic and magnetic properties of epitaxial Fe films can be controlled by the precise nature of the substrate which acts as the template for the growth. We have investigated the role of defects and strain arising from lattice mismatch on the growth and the magnetic properties of the Fe films. The films were grown by molecular‐beam epitaxy (MBE) on three different well characterized surfaces: GaAs(100), In_0.2Ga_0.8As(100), and Fe(100). The first two surfaces were also prepared by MBE. This mole fraction of In was chosen to match the lattice constant of bulk α‐Fe. The growth of the Fe film was characterized by using reflection high‐energy electron diffraction (RHEED) and the results indicate that the morphology of the Fe films is smoother on the InGaAs surface than on the GaAs surface. Yet is is still much rougher than the growth on Fe(100) substrate. The magnetic properties were measured by using a SQUID magnetometer and coercivity values are comparable to that of the films grown on ZnSe¹.

Original language	English (US)
Pages (from-to)	3672
Number of pages	1
Journal	Journal of Applied Physics
Volume	63
Issue number	8
DOIs	https://doi.org/10.1063/1.340681
State	Published - Apr 15 1988

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title = "Substrate modified growth of epitaxial Fe films (abstract)",

abstract = "It is now clear that both the atomic and magnetic properties of epitaxial Fe films can be controlled by the precise nature of the substrate which acts as the template for the growth. We have investigated the role of defects and strain arising from lattice mismatch on the growth and the magnetic properties of the Fe films. The films were grown by molecular‐beam epitaxy (MBE) on three different well characterized surfaces: GaAs(100), In0.2Ga0.8As(100), and Fe(100). The first two surfaces were also prepared by MBE. This mole fraction of In was chosen to match the lattice constant of bulk α‐Fe. The growth of the Fe film was characterized by using reflection high‐energy electron diffraction (RHEED) and the results indicate that the morphology of the Fe films is smoother on the InGaAs surface than on the GaAs surface. Yet is is still much rougher than the growth on Fe(100) substrate. The magnetic properties were measured by using a SQUID magnetometer and coercivity values are comparable to that of the films grown on ZnSe1.",

author = "S. Batra and Wowchak, {A. M.} and Cohen, {Philip I} and Lottis, {D. K.} and Dahlberg, {E D}",

year = "1988",

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T1 - Substrate modified growth of epitaxial Fe films (abstract)

AU - Batra, S.

AU - Wowchak, A. M.

AU - Cohen, Philip I

AU - Lottis, D. K.

AU - Dahlberg, E D

PY - 1988/4/15

Y1 - 1988/4/15

N2 - It is now clear that both the atomic and magnetic properties of epitaxial Fe films can be controlled by the precise nature of the substrate which acts as the template for the growth. We have investigated the role of defects and strain arising from lattice mismatch on the growth and the magnetic properties of the Fe films. The films were grown by molecular‐beam epitaxy (MBE) on three different well characterized surfaces: GaAs(100), In0.2Ga0.8As(100), and Fe(100). The first two surfaces were also prepared by MBE. This mole fraction of In was chosen to match the lattice constant of bulk α‐Fe. The growth of the Fe film was characterized by using reflection high‐energy electron diffraction (RHEED) and the results indicate that the morphology of the Fe films is smoother on the InGaAs surface than on the GaAs surface. Yet is is still much rougher than the growth on Fe(100) substrate. The magnetic properties were measured by using a SQUID magnetometer and coercivity values are comparable to that of the films grown on ZnSe1.

AB - It is now clear that both the atomic and magnetic properties of epitaxial Fe films can be controlled by the precise nature of the substrate which acts as the template for the growth. We have investigated the role of defects and strain arising from lattice mismatch on the growth and the magnetic properties of the Fe films. The films were grown by molecular‐beam epitaxy (MBE) on three different well characterized surfaces: GaAs(100), In0.2Ga0.8As(100), and Fe(100). The first two surfaces were also prepared by MBE. This mole fraction of In was chosen to match the lattice constant of bulk α‐Fe. The growth of the Fe film was characterized by using reflection high‐energy electron diffraction (RHEED) and the results indicate that the morphology of the Fe films is smoother on the InGaAs surface than on the GaAs surface. Yet is is still much rougher than the growth on Fe(100) substrate. The magnetic properties were measured by using a SQUID magnetometer and coercivity values are comparable to that of the films grown on ZnSe1.

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DO - 10.1063/1.340681

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VL - 63

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Substrate modified growth of epitaxial Fe films (abstract)

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