Submonolayer phases of Pb on Si(111)

Eric Ganz, Fulin Xiong, Ing Shouh Hwang, Jene Golovchenko

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Abstract

We present conclusive results on the structures and coverages of the submonolayer phases of Pb on the Si(111) 7×7 surface based on scanning-tunneling-microscopy, low-energy-electron-diffraction, and Rutherford backscattering measurements. For room-temperature deposition at low coverage on the 7×7 surface, we find that Pb atoms occupy sites above and between the Si adatoms (with a preference for the faulted half of the unit cell) leaving the 7×7 structure intact. After annealing to 450°C, some Pb atoms occupy Si(111) 7×7 adatom sites, while others have nucleated to form small areas of an unusual 3 × 3 phase which has a 1:1 ratio of Si:Pb.

Original languageEnglish (US)
Pages (from-to)7316-7319
Number of pages4
JournalPhysical Review B
Volume43
Issue number9
DOIs
StatePublished - Jan 1 1991

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    Ganz, E., Xiong, F., Hwang, I. S., & Golovchenko, J. (1991). Submonolayer phases of Pb on Si(111). Physical Review B, 43(9), 7316-7319. https://doi.org/10.1103/PhysRevB.43.7316