Sub-ns Switching and Cryogenic-Temperature Performance of Mo-Based Perpendicular Magnetic Tunnel Junctions

Deyuan Lyu, Pravin Khanal, Yang Lv, Bowei Zhou, Hwanhui Yun, Qi Jia, Brandon R Zink, Yihong Fan, K. Andre Mkhoyan, Weigang Wang, Jianping Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Mo-based perpendicular magnetic tunnel junctions (Mo-pMTJs) can outperform mainstream Ta-pMTJs in terms of perpendicular magnetic anisotropy (PMA) and thermal tolerance. However, studies on the ultrafast switching of Mo-pMTJ devices remain limited. In addition, although pMTJ devices have potential to function as cryogenic memory cells, there has been no report on the performance of Mo-pMTJs at low temperatures until now. In this Letter, Mo-pMTJs were prepared with strong PMA and patterned into nanoscale devices. Scanning transmission electron microscopy was employed to characterize the device lateral dimension and structure integrity. Systematic probability measurements were conducted under various pulse widths and current densities. On the ultrafast timescale down to sub-ns, the switching is confirmed to enter the precessional regime. The optimization of the switching energy is discussed. Moreover, we investigate the magneto-transport properties and switching of Mo-pMTJs at low temperatures down to 2 K. The feasibility of utilizing Mo-pMTJ devices in cryogenic memory is verified through this work.

Original languageEnglish (US)
Pages (from-to)1215-1218
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number8
DOIs
StatePublished - Aug 1 2022

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

  • Molybdenum (Mo)
  • cryogenic memory
  • perpendicular magnetic tunnel junctions
  • sub-ns switching

How much support was provided by MRSEC?

  • Partial

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