CuInS 2 (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked precursor. The precursor thin films were sulfurized using a commercial furnace system in the S 2 (s) + Ar atmosphere at 425°C for 1 h. Effects of different S vapor temperature from 150 to 400°C on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction and Raman studies showed that the sulfurized thin films with S vaporization temperature below 300°C exhibited CIS tetragonal structure with secondary phases such as Cu x S y , CuIn 5 S 8 , and In x S y . The sulfurized thin films with S vaporization temperature over 350°C showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu + In) ratio in the CIS thin films with S vaporization temperature over 350°C were 1.0-1.2 and 0.9-1.1, respectively, while compositional ratio deviated from stoichiometry when the sulfurized thin films below S vaporization temperature of 350°C. Optical study showed that the band gap energy and the absorption coefficient of CIS thin films were estimated from 1.18 eV to 1.5 eV and over 10 4 cm -1 , respectively.
- Low cost process
- S powder
- Thin film solar cells (TFSCs)
- Vaporization temperature