Study on self-alignment property of silicon nanowire in temperature gradient

Yanfeng Jiang, Xiaobo Zhang, Bing Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel phenomenon about silicon nanowire(SiNW) is discussed here, which is related to its self-alignment characteristic when a temperature gradient field appears assisted by electric field. For the SiNW grown by vapor-liquid-solid method, it suffers an alignment force when its two terminals' temperature is different. Experiments about this effects have been observed and it has been anticipated that this property can be used in assembling SiNW array. Furthermore, some explanations on this effect have been made in this paper.

Original languageEnglish (US)
Title of host publication4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Pages926-929
Number of pages4
DOIs
StatePublished - Oct 12 2009
Event4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 - Shenzhen, China
Duration: Jan 5 2009Jan 8 2009

Publication series

Name4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

Other

Other4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
CountryChina
CityShenzhen
Period1/5/091/8/09

Keywords

  • Self-alignment
  • Silicon nanowire
  • Temperature gradient

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