A double layer electroluminescent (EL) device, Ga/Alq3/TCAQ/ITO was fabricated by using Alq3 as emitter layer, TCAQ as hole transport layer, and Ga and ITO as electrodes. Based on the data of UV-visible, surface photovoltage spectra (SPS), electric-field-induced SPS (EFISPS) and cyclic voltammograms, the energy band model of the EL device was put forward and its electroluminescent behavior was explained by the model.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Mar 15 1997|