Study on electroluminescent behavior of Ga/Alq3/TCAQ/ITO double layer device

Y. A. Cao, Y. B. Bai, Q. J. Men, C. H. Chen, J. H. Yang, X. D. Chai, W. S. Yang, Z. W. Wu, T. J. Li

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A double layer electroluminescent (EL) device, Ga/Alq3/TCAQ/ITO was fabricated by using Alq3 as emitter layer, TCAQ as hole transport layer, and Ga and ITO as electrodes. Based on the data of UV-visible, surface photovoltage spectra (SPS), electric-field-induced SPS (EFISPS) and cyclic voltammograms, the energy band model of the EL device was put forward and its electroluminescent behavior was explained by the model.

Original languageEnglish (US)
Pages (from-to)1267-1268
Number of pages2
JournalSynthetic Metals
Volume85
Issue number1-3
StatePublished - Mar 15 1997

Keywords

  • Electroluminescence
  • Heterojunctions

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