Study on electroluminescent behavior of Ga/Alq3/TCAQ/ITO double layer device

Y. A. Cao; Y. B. Bai; Q. J. Men; C. H. Chen; J. H. Yang; X. D. Chai; W. S. Yang; Z. W. Wu; T. J. Li

doi:10.1016/s0379-6779(97)80234-2

Study on electroluminescent behavior of Ga/Alq₃/TCAQ/ITO double layer device

Y. A. Cao, Y. B. Bai, Q. J. Men, C. H. Chen, J. H. Yang, X. D. Chai, W. S. Yang, Z. W. Wu, T. J. Li

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A double layer electroluminescent (EL) device, Ga/Alq₃/TCAQ/ITO was fabricated by using Alq₃ as emitter layer, TCAQ as hole transport layer, and Ga and ITO as electrodes. Based on the data of UV-visible, surface photovoltage spectra (SPS), electric-field-induced SPS (EFISPS) and cyclic voltammograms, the energy band model of the EL device was put forward and its electroluminescent behavior was explained by the model.

Original language	English (US)
Pages (from-to)	1267-1268
Number of pages	2
Journal	Synthetic Metals
Volume	85
Issue number	1-3
DOIs	https://doi.org/10.1016/s0379-6779(97)80234-2
State	Published - Mar 15 1997

Keywords

Electroluminescence
Heterojunctions

Publisher link

10.1016/s0379-6779(97)80234-2

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@article{a703567c15bf41fcb9b39fbb2567a040,

title = "Study on electroluminescent behavior of Ga/Alq3/TCAQ/ITO double layer device",

abstract = "A double layer electroluminescent (EL) device, Ga/Alq3/TCAQ/ITO was fabricated by using Alq3 as emitter layer, TCAQ as hole transport layer, and Ga and ITO as electrodes. Based on the data of UV-visible, surface photovoltage spectra (SPS), electric-field-induced SPS (EFISPS) and cyclic voltammograms, the energy band model of the EL device was put forward and its electroluminescent behavior was explained by the model.",

keywords = "Electroluminescence, Heterojunctions",

author = "Cao, {Y. A.} and Bai, {Y. B.} and Men, {Q. J.} and Chen, {C. H.} and Yang, {J. H.} and Chai, {X. D.} and Yang, {W. S.} and Wu, {Z. W.} and Li, {T. J.}",

year = "1997",

month = mar,

day = "15",

doi = "10.1016/s0379-6779(97)80234-2",

language = "English (US)",

volume = "85",

pages = "1267--1268",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Study on electroluminescent behavior of Ga/Alq3/TCAQ/ITO double layer device

AU - Cao, Y. A.

AU - Bai, Y. B.

AU - Men, Q. J.

AU - Chen, C. H.

AU - Yang, J. H.

AU - Chai, X. D.

AU - Yang, W. S.

AU - Wu, Z. W.

AU - Li, T. J.

PY - 1997/3/15

Y1 - 1997/3/15

N2 - A double layer electroluminescent (EL) device, Ga/Alq3/TCAQ/ITO was fabricated by using Alq3 as emitter layer, TCAQ as hole transport layer, and Ga and ITO as electrodes. Based on the data of UV-visible, surface photovoltage spectra (SPS), electric-field-induced SPS (EFISPS) and cyclic voltammograms, the energy band model of the EL device was put forward and its electroluminescent behavior was explained by the model.

AB - A double layer electroluminescent (EL) device, Ga/Alq3/TCAQ/ITO was fabricated by using Alq3 as emitter layer, TCAQ as hole transport layer, and Ga and ITO as electrodes. Based on the data of UV-visible, surface photovoltage spectra (SPS), electric-field-induced SPS (EFISPS) and cyclic voltammograms, the energy band model of the EL device was put forward and its electroluminescent behavior was explained by the model.

KW - Electroluminescence

KW - Heterojunctions

UR - http://www.scopus.com/inward/record.url?scp=0031072778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031072778&partnerID=8YFLogxK

U2 - 10.1016/s0379-6779(97)80234-2

DO - 10.1016/s0379-6779(97)80234-2

M3 - Article

AN - SCOPUS:0031072778

SN - 0379-6779

VL - 85

SP - 1267

EP - 1268

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

ER -