@inproceedings{e76ba8d410ba46499052dc4420243281,
title = "Study on channel parameters of static induction transistor",
abstract = "The electric performance of static induction transistor (SIT) is dependent strongly on the channel parameters of device. The ratio of is an essential combined channel parameter not only for I-V characteristics but also for the high-current performance of device especially for the high frequency SIT (HF SIT), which are researched in this article. The pinch factor is also a key combined channel parameter embodies the general control criterion of fabrication parameters in determining whether it is a mixed, triode-like or pentode-like I-V characteristic which are also studied in detail. A great deal of experimental results is given which are available and convenient for design and fabrication of HF SIT, particularly for mixed I-V non-saturating characteristics.",
keywords = "Channel Parameters, SIT, Transistor",
author = "Jiaxin Ju and Wanrong Zhang and Haolin Du and Yanfeng Jiang and Tengfei Yang and Yamin Zhang",
year = "2011",
doi = "10.1007/978-3-642-19706-2_57",
language = "English (US)",
isbn = "9783642197055",
series = "Lecture Notes in Electrical Engineering",
number = "VOL. 1",
pages = "443--450",
booktitle = "Future Intelligent Information Systems",
edition = "VOL. 1",
note = "2010 International Conference on Electrical and Electronics Engineering, ICEEE 2010 ; Conference date: 04-12-2010 Through 05-12-2010",
}