Study on channel parameters of static induction transistor

Jiaxin Ju, Wanrong Zhang, Haolin Du, Yanfeng Jiang, Tengfei Yang, Yamin Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electric performance of static induction transistor (SIT) is dependent strongly on the channel parameters of device. The ratio of is an essential combined channel parameter not only for I-V characteristics but also for the high-current performance of device especially for the high frequency SIT (HF SIT), which are researched in this article. The pinch factor is also a key combined channel parameter embodies the general control criterion of fabrication parameters in determining whether it is a mixed, triode-like or pentode-like I-V characteristic which are also studied in detail. A great deal of experimental results is given which are available and convenient for design and fabrication of HF SIT, particularly for mixed I-V non-saturating characteristics.

Original languageEnglish (US)
Title of host publicationFuture Intelligent Information Systems
Pages443-450
Number of pages8
EditionVOL. 1
DOIs
StatePublished - May 25 2011
Event2010 International Conference on Electrical and Electronics Engineering, ICEEE 2010 - Wuhan, China
Duration: Dec 4 2010Dec 5 2010

Publication series

NameLecture Notes in Electrical Engineering
NumberVOL. 1
Volume86 LNEE
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Other

Other2010 International Conference on Electrical and Electronics Engineering, ICEEE 2010
CountryChina
CityWuhan
Period12/4/1012/5/10

Keywords

  • Channel Parameters
  • SIT
  • Transistor

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