Study of charge and inversion layer mobility in hafnium oxide stacks

Keyphrases

• HfO2 100%
• Interfacial Layer 100%
• Hole Mobility 100%
• Layer Interface 100%
• Hafnium Oxide 100%
• Inversion Layer 100%
• Oxide Stack 100%
• Charge Transport Layers 100%
• Copyright 50%
• Electron Mobility 50%
• Interface State Density 50%
• Hysteresis 50%
• Multiple Scattering 50%
• Post-deposition Annealing 50%
• State of Charge 50%
• Gate Stack 50%
• Interface Charge 50%
• Forming Gas Annealing 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Coulomb Scattering 50%
• Scattering Source 50%
• Mobility Degradation 50%
• Mobility Experience 50%
• Residual Defect 50%
• Residual Impurities 50%
• Interface Traps 50%

Engineering

• Layer Interface 100%
• Interfacial Layer 100%
• Deposited Film 50%
• Forming Gas Anneal 50%
• Gate Stack 50%
• Charge State 50%
• Interface State 50%

Material Science

• Film 100%
• Hafnium 100%
• Oxide Compound 100%
• Hole Mobility 66%
• Density 33%
• Electron Mobility 33%