Study of black phosphorus anisotropy on silicon photonic waveguide

Che Chen; Nathan Youngblood; Mo Li

doi:10.1109/OGC.2015.7336864

Study of black phosphorus anisotropy on silicon photonic waveguide

Che Chen, Nathan Youngblood, Mo Li

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Due to its unique crystal structure, black phosphorus (BP) shows anisotropic electric and optical properties. In this work, we demonstrate its optical anisotropy by measuring its different absorptions of TE and TM modes travelling in silicon photonic waveguides. In the experiment, when BP crystal armchair axis is aligned perpendicularly to waveguide, the measured absorption coefficients for TE and TM are 0.821 dB/μm and 0.413 dB/μm, respectively. The result matches well with our calculated absorptions of 1.075 dB/μm and 0.581 dB/μm for TE and TM modes. By carefully selecting BP thickness and orientation, it is possible to selectively absorb either TE or TM mode and as an example, TE/TM contrast can reach up to 1.1 dB/μm when BP thickness is 100 nm.

Original language	English (US)
Title of host publication	2015 Optoelectronics Global Conference, OGC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467377324
DOIs	https://doi.org/10.1109/OGC.2015.7336864
State	Published - Nov 24 2015
Event	Optoelectronics Global Conference, OGC 2015 - Shenzhen, China Duration: Aug 29 2015 → Aug 31 2015

Other

Other	Optoelectronics Global Conference, OGC 2015
Country/Territory	China
City	Shenzhen
Period	8/29/15 → 8/31/15

Keywords

black phosphorus
optical anisotropic absorption
silicon waveguide
two dimensional materials

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10.1109/OGC.2015.7336864

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title = "Study of black phosphorus anisotropy on silicon photonic waveguide",

abstract = "Due to its unique crystal structure, black phosphorus (BP) shows anisotropic electric and optical properties. In this work, we demonstrate its optical anisotropy by measuring its different absorptions of TE and TM modes travelling in silicon photonic waveguides. In the experiment, when BP crystal armchair axis is aligned perpendicularly to waveguide, the measured absorption coefficients for TE and TM are 0.821 dB/μm and 0.413 dB/μm, respectively. The result matches well with our calculated absorptions of 1.075 dB/μm and 0.581 dB/μm for TE and TM modes. By carefully selecting BP thickness and orientation, it is possible to selectively absorb either TE or TM mode and as an example, TE/TM contrast can reach up to 1.1 dB/μm when BP thickness is 100 nm.",

keywords = "black phosphorus, optical anisotropic absorption, silicon waveguide, two dimensional materials",

author = "Che Chen and Nathan Youngblood and Mo Li",

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doi = "10.1109/OGC.2015.7336864",

language = "English (US)",

booktitle = "2015 Optoelectronics Global Conference, OGC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "Optoelectronics Global Conference, OGC 2015 ; Conference date: 29-08-2015 Through 31-08-2015",

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T1 - Study of black phosphorus anisotropy on silicon photonic waveguide

AU - Chen, Che

AU - Youngblood, Nathan

AU - Li, Mo

PY - 2015/11/24

Y1 - 2015/11/24

N2 - Due to its unique crystal structure, black phosphorus (BP) shows anisotropic electric and optical properties. In this work, we demonstrate its optical anisotropy by measuring its different absorptions of TE and TM modes travelling in silicon photonic waveguides. In the experiment, when BP crystal armchair axis is aligned perpendicularly to waveguide, the measured absorption coefficients for TE and TM are 0.821 dB/μm and 0.413 dB/μm, respectively. The result matches well with our calculated absorptions of 1.075 dB/μm and 0.581 dB/μm for TE and TM modes. By carefully selecting BP thickness and orientation, it is possible to selectively absorb either TE or TM mode and as an example, TE/TM contrast can reach up to 1.1 dB/μm when BP thickness is 100 nm.

AB - Due to its unique crystal structure, black phosphorus (BP) shows anisotropic electric and optical properties. In this work, we demonstrate its optical anisotropy by measuring its different absorptions of TE and TM modes travelling in silicon photonic waveguides. In the experiment, when BP crystal armchair axis is aligned perpendicularly to waveguide, the measured absorption coefficients for TE and TM are 0.821 dB/μm and 0.413 dB/μm, respectively. The result matches well with our calculated absorptions of 1.075 dB/μm and 0.581 dB/μm for TE and TM modes. By carefully selecting BP thickness and orientation, it is possible to selectively absorb either TE or TM mode and as an example, TE/TM contrast can reach up to 1.1 dB/μm when BP thickness is 100 nm.

KW - black phosphorus

KW - optical anisotropic absorption

KW - silicon waveguide

KW - two dimensional materials

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DO - 10.1109/OGC.2015.7336864

M3 - Conference contribution

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BT - 2015 Optoelectronics Global Conference, OGC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Optoelectronics Global Conference, OGC 2015

Y2 - 29 August 2015 through 31 August 2015

ER -

Study of black phosphorus anisotropy on silicon photonic waveguide

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